Helm Scientific specializes in the advanced probing or e-test of discrete electronic and photonic devices at the wafer, diced or packaged levels, and is honored to provide consulting services in the following areas.
- Electrically and optically characterizing micro/nano semiconductor (Si, Ge, III-V) devices and materials via proven methods based on device physics
- Systematically analyzing electric and optical parameters to debug device physical structures and identify process and integration issues
- Correlating in-line and end-of-line electric/optical test result to wafer manufacture process parameters, and to wafer in-line metrology/inspection data
- Segmenting the root causes of device performance issues and proposing fab process or integration improvements or fixes
- Advanced test code development for device parametric analyzers, waveform/pulse generators, switch matrixes, optical detectors/spectrometers and automatic probe stations.
The device laboratory of Helm Scientific is equipped with an advanced DC, AC, pulsed parametric test system and an optical spectrometer to characterize electronic and photonic devices and test structures in IC wafers or diced/packaged forms. It also characterizes semiconductor, dielectric and materials for fab FEOL and BEOL process development, device engineering and failure analysis. These devices or structures include
- MOSFET (Bulk FET, FinFET, GAA-FET). NVM (flash, PCM, RRAM, FRAM) cells. DRAM, ZRAM cells
- Camera pixel array (pinned photodiode CIS, infrared, thermal). Imager pixel array (micro LED)
- III-V high-electron-mobility transistors (HEMT), Heterojunction bipolar transistors (HBT, BJT)
- III-V multi-quantum well light emitting diodes (micro-LED). Diodes, photo diodes (PD, APD), solar cells
- Gate-controlled diodes, MOS Capacitors, high-K film stack test structures Metal via/line resistors
- Ohmic contact or Schottky contact structures
Our low-leakage electric (I-V, L-I-V, C-V, pulsed) and optical (EL, PL) probing capabilities (see image) are
- Voltage resolution and range: 100 nV and +/-200 V, respectively
- Current resolution and range: 10 fA and 3 A, respectively
- Optical power detection and limit: 350 ~ 1100 nm and ~1 nW, respectively
- Spectroscopy (EL, PL): 350 ~ 700 nm wavelength, <0.5 nm resolution
- C-V frequency: 20 Hz ~ 2 MHz. DC bias: 0~40 V
- 120 MHz arbitrary waveform and 100 MHz pulses, Vpp=20 V
- 4-Channel 350 MHz pre-amplifier for ac transient and RF measurements
- 4-Channel digital oscilloscope: 2 GSa/s speed
- Chuck temperature range: 25 to 200 degree C
- Whole (up to 12" diameter) or partial wafer probing and discrete device test
- Fully-automated instrumental control and data acquisition
